With the rapid evolution of AI, IoT, 5G/6G, etc., all kinds of devices are required to be thinner. However, thinner devices pose many challenges for transport in the manufacturing process, and it is urgently needed to find a simple and clean temporary bonding technology for carrier substrates. At present, temporary bonding using organic adhesives and peeling by UV irradiation are the most common methods, but residue on the work substrate is a problem, and the carrier substrate must be made of a material that can transmit UV light. In addition, there was no effective method when the carrier substrate was a Si wafer.

• ✓Using the room temperature bonding method, an inorganic film is deposited on the carrier substrate and the work substrate is bonded.
• ✓The bonding status is kept during the normal manufacturing process and does not peel off.
• ✓After the completion of each process, the work substrate can be peeled off easily with ultra-low stress by applying the specified ultrasonic vibration.
• ✓There is almost no residue on the work substrate side.
• ✓It can be used for temporary bonding of Si wafers to each other, Si wafers to glass, and glass to glass.

1. Easy peeling by ultrasonic vibration
2. Ultra-low stress on the substrate
3. Almost no residue on the workpiece substrate

This is the most suitable technology for the semiconductor interposer manufacturing process, which is expected to grow rapidly, and can be applied to current Si interposers and future glass interposers. We are planning to verify the process as soon as possible.