COMPANY INFO
Location |
Head Office
1-26-2-32F, Nishi-Shinjuku, Shinjuku-ku,
Tokyo, 163-0532, Japan TEL +81-3-5322-2061 FAX +81-3-5322-2060 |
---|---|
Sales Office
708-10, Fukushima-machi, Takasaki-shi,
Gunma, 370-3523, Japan TEL +81-27-350-3233 FAX +81-27-350-3236 |
|
Osaka Office
#508, 5F, 1-18-27, Higashinakajima, Higashiyodogawa-ku,
Osaka-shi, Osaka, 533-0033, Japan TEL:+81-6-6325-8188 FAX: +81-6-6325-8187 |
|
Gunma Factory
708-10, Fukushima-machi, Takasaki-shi,
Gunma, 370-3523, Japan TEL +81-27-350-3233 FAX +81-27-350-3236 |
|
Taiwan Office
Closed on March 31 2023
1F., No. 69, Sec. 1, Lioujia 1st Rd., Jhubei City,
Hsinchu County 302, Taiwan (R.O.C.) |
|
Capital | ¥30,000,000 |
Our Bank |
The Bank of Tokyo Mitsubishi UFJ/Harajuku Br. Resona Bank, Limited./Shinjuku Br. Mizuho Bank, Ltd./Shinjuku Chuo Br. |
President | Yoshiie Matsumoto |
Main Products |
OLED Encapsulation Vacuum Assembly System UV related tools Room Temperature Bonding Tools |
Company History
- 1985
- Established Lantechnical Service Corporation in Kamiyama-cho, Shibuya-ku, Tokyo
- 1987
- Developed and started sales of fully automatic sealing machine for LCD
- 1987
- Moved to 1-45-11 Yoyogi, Shibuya-ku, Tokyo due to business expansion
- 1990
- Opened Osaka Sales Office
- 1990
- Started sales of fully automatic pressure sealing equipment
- 1994
- Started sales of non-contact end-sealing machine, non-contact optical presses, and non-contact hot presses
- 1999
- Developed and started sales of encapsulation systems for OLED
- 2000
- Opened Factory in Takasaki City, Gunma Prefecture
- 2007
- Opened a laboratory in the Katsura Venture Plaza of Kyoto University as a base for ion beam research and development.
- 2009
- Started development of surface-activated bonding technology in cooperation with Suga Laboratory, The University of Tokyo
- 2012
- Succeeded in developing a surface-activated bonding technique using an interlayer film. Succeeded in bonding inorganic glass for the first time in the world.
- 2013
- Head office relocated to current location
- 2014
- Developed temporary bonding/de-bonding technology by applying surface activation technique
- 2018
- Developed transparent interlayer film by surface activation method. Developed transparent bonding technology
- 2018
- Developed SiC ingot production method by surface activation method.
- 2021-2022
- Develop further advanced technology for temporary bonding/de-bonding by surface activation method. Develop exfoliation technology with extremely low stress.