COMPANY INFO

COMPANY INFO

Location
Head Office
1-26-2-32F, Nishi-Shinjuku, Shinjuku-ku,
Tokyo, 163-0532, Japan
TEL +81-3-5322-2061 FAX +81-3-5322-2060
Sales Office
708-10, Fukushima-machi, Takasaki-shi,
Gunma, 370-3523, Japan
TEL +81-27-350-3233 FAX +81-27-350-3236
Osaka Office
#508, 5F, 1-18-27, Higashinakajima, Higashiyodogawa-ku,
Osaka-shi, Osaka, 533-0033, Japan
TEL:+81-6-6325-8188 FAX: +81-6-6325-8187
Gunma Factory
708-10, Fukushima-machi, Takasaki-shi,
Gunma, 370-3523, Japan
TEL +81-27-350-3233
FAX +81-27-350-3236
Taiwan Office
Closed on March 31 2023
1F., No. 69, Sec. 1, Lioujia 1st Rd., Jhubei City,
Hsinchu County 302, Taiwan (R.O.C.)
Capital ¥30,000,000
Our Bank The Bank of Tokyo Mitsubishi UFJ/Harajuku Br.
Resona Bank, Limited./Shinjuku Br.
Mizuho Bank, Ltd./Shinjuku Chuo Br.
President Yoshiie Matsumoto
Main Products OLED Encapsulation
Vacuum Assembly System
UV related tools
Room Temperature Bonding Tools

Company History

1985
Established Lantechnical Service Corporation in Kamiyama-cho, Shibuya-ku, Tokyo
1987
Developed and started sales of fully automatic sealing machine for LCD
1987
Moved to 1-45-11 Yoyogi, Shibuya-ku, Tokyo due to business expansion
1990
Opened Osaka Sales Office
1990
Started sales of fully automatic pressure sealing equipment
1994
Started sales of non-contact end-sealing machine, non-contact optical presses, and non-contact hot presses
1999
Developed and started sales of encapsulation systems for OLED
2000
Opened Factory in Takasaki City, Gunma Prefecture
2007
Opened a laboratory in the Katsura Venture Plaza of Kyoto University as a base for ion beam research and development.
2009
Started development of surface-activated bonding technology in cooperation with Suga Laboratory, The University of Tokyo
2012
Succeeded in developing a surface-activated bonding technique using an interlayer film. Succeeded in bonding inorganic glass for the first time in the world.
2013
Head office relocated to current location
2014
Developed temporary bonding/de-bonding technology by applying surface activation technique
2018
Developed transparent interlayer film by surface activation method. Developed transparent bonding technology
2018
Developed SiC ingot production method by surface activation method.
2021-2022
Develop further advanced technology for temporary bonding/de-bonding by surface activation method. Develop exfoliation technology with extremely low stress.
PAGETOP