Low Temperature Sintering Equipment

Application

• Suitable for multi-scenario copper/silver sintering process
• It can be used for laboratory low-temperature copper diffusion connection research and industrial SiC power electronics module packaging
• Fine-Pitch bump bonding, solder/copper bump bonding
• Development and mass production of MEMS, optoelectronics and hybrid bonding

Technical advantage

• Relying on years of technical achievements from top laboratories at home and abroad
• Direct diffusion connection or low temperature solder paste sintering is possible
• Can be combined with nano-paste to provide a complete set of solution
• Safe, reliable and environmentally friendly
• Vacuum or a variety of controlled atmosphere oxidation protection

FATB series

• Item	Parameter
  Range of pressure	0～2000N/3000N/8000N (option)
  Stability of pressure	±10N
  Z axis stroke	90mm/120mm
  Temperature control range of pressure head	RT～300℃
  Pressure head temperature control stability	±1℃
  Indenter heating rate (RT-250℃)	5min
  Upper sample size	0.5*0.5mm
  Lower sample size	50*50mm
  The catalytic box controls the temperature range and stability	RT～250℃/±2℃
  Catalytic box heating rate（RT-180℃）	5min
  Cooling Method	Air

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ASTB series Full auto

• Item	Parameter
  Maximum sintering pressure	30MPa
  Controlled pressure stability	±0.5MP
  Minimum spacing between chips	0.4mm
  Maximum effective sintering area	350mm*270mm
  Maximum sintering temperature	300℃
  Uniformity of temperature	±3℃
  Sintering temperature control stability	±1℃
  Maximum clamping force	1000kN
  Maximum flow rate of activation gas	50L/min
  Preheating temperature	RT～150℃
  Preheating temperature stability	±1℃
  Cooling Temperature	Less than50℃
  Oxygen content	Less than50ppm
  Activation method	Catalytic activation by formic acid

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