C2C/C2W Bonding

Application

• 3DIC, power module packaging, flip welding, etc
• Chip to Wafer hybrid bonding (Cu/PI, Cu/SiO₂ hybrid bonding)
• Fine-Pitch bump bonding, solder/copper bump bonding
• Development and mass production of MEMS, optoelectronics and hybrid bonding

Technical advantage

• High precision alignment: ≤±2µm(optional: ≤±1µm, ≤±0.5µm)
• The core module is autonomous and controllable
• Can be customized according to customer needs
• A full range of low temperature bonding solutions are available
• A variety of material activation methods: formic acid activation, plasma activation, low stress low temperature bonding

C2C Bonding

MAFB series C2C

• Item	Parameter
  Pressure range/controlled pressure stability	0～2000N/3000N:±2N
  Alignment accuracy	±50nm
  Post-bonding accuracy	≤±2µm；≤±1µm；≤±500nm
  Pressure head temperature control range/pressure head temperature control stability	RT～300℃/±1℃
  Indenter heating rate（RT-250℃）	5min
  Sample size	Top：1*1～50*50mm; Below：2*2～300*300mm
  Cooling Method	Air
  Atmosphere in Bonding chamber	Vacuum、Formic acid、Inert atmosphere, etc

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SAFP series small lot C2W

• Item	Parameter
  Pressure range/controlled pressure stability	1～50N:±0.5N 51～2000N:±2N
  Alignment accuracy	±50nm
  Post-bonding accuracy	≤±2µm；≤±1µm；≤±500nm
  Activation Method	Formic acid catalytic activation, etc Ion activation module (optional)

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FDWB series Full auto C2W

• Item	Parameter
  Range of pressure	0～300N
  Post-bonding accuracy	±500nm@3σ
  Alignment accuracy	±50nm
  Chip size	1*1—32*32mm
  Wafer size	φ300mm
  TF Station	2
  FOUP Station	2
  UPH	400
  Capacity of Application	Cu-SiO2 hybrid bonding；SiO2-SiO2Low temperature bonding
  Equipment units	Activation, cleaning, lifting, alignment, bonding, inspection

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